Datasheets
FMP06N60ES by: Fuji Electric Co Ltd

Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for FMP06N60ES by Fuji Electric Co Ltd

Overview of FMP06N60ES by Fuji Electric Co Ltd

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for FMP06N60ES

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FMP06N60ES Part Data Attributes

FMP06N60ES Fuji Electric Co Ltd
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FMP06N60ES Fuji Electric Co Ltd Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Part Life Cycle Code Not Recommended
Ihs Manufacturer FUJI ELECTRIC CO LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 313.7 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FMP06N60ES

This table gives cross-reference parts and alternative options found for FMP06N60ES. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMP06N60ES, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FMP06N60E Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN Fuji Electric Co Ltd FMP06N60ES vs FMP06N60E
STB6NK60Z 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics FMP06N60ES vs STB6NK60Z
STB6LNC60 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics FMP06N60ES vs STB6LNC60
STP6LNC60 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics FMP06N60ES vs STP6LNC60
R6006ANDTL Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN ROHM Semiconductor FMP06N60ES vs R6006ANDTL
STP6N62K3 N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 package STMicroelectronics FMP06N60ES vs STP6N62K3
STI6N62K3 N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAK STMicroelectronics FMP06N60ES vs STI6N62K3
STU6N62K3 N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK STMicroelectronics FMP06N60ES vs STU6N62K3
STB6LNC60T4 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics FMP06N60ES vs STB6LNC60T4

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