Part Details for FMP06N60ES by Fuji Electric Co Ltd
Overview of FMP06N60ES by Fuji Electric Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FMP06N60ES
FMP06N60ES CAD Models
FMP06N60ES Part Data Attributes
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FMP06N60ES
Fuji Electric Co Ltd
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Datasheet
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FMP06N60ES
Fuji Electric Co Ltd
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 313.7 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 6 A | |
Drain-source On Resistance-Max | 1.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FMP06N60ES
This table gives cross-reference parts and alternative options found for FMP06N60ES. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMP06N60ES, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FMP06N60E | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN | Fuji Electric Co Ltd | FMP06N60ES vs FMP06N60E |
STB6NK60Z | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | FMP06N60ES vs STB6NK60Z |
STB6LNC60 | 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | FMP06N60ES vs STB6LNC60 |
STP6LNC60 | 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FMP06N60ES vs STP6LNC60 |
R6006ANDTL | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN | ROHM Semiconductor | FMP06N60ES vs R6006ANDTL |
STP6N62K3 | N-channel 620 V, 0.95 Ohm typ., 5.5 A SuperMESH3(TM) Power MOSFET in TO-220 package | STMicroelectronics | FMP06N60ES vs STP6N62K3 |
STI6N62K3 | N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in I2PAK | STMicroelectronics | FMP06N60ES vs STI6N62K3 |
STU6N62K3 | N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK | STMicroelectronics | FMP06N60ES vs STU6N62K3 |
STB6LNC60T4 | 5.8A, 600V, 1.25ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | STMicroelectronics | FMP06N60ES vs STB6LNC60T4 |