Datasheets
FMH28N50ES by: Fuji Electric Co Ltd

Power Field-Effect Transistor, 28A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), SC-65, 3 PIN

Part Details for FMH28N50ES by Fuji Electric Co Ltd

Overview of FMH28N50ES by Fuji Electric Co Ltd

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Part Details for FMH28N50ES

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FMH28N50ES Part Data Attributes:

FMH28N50ES Fuji Electric Co Ltd
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FMH28N50ES Fuji Electric Co Ltd Power Field-Effect Transistor, 28A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P(Q), SC-65, 3 PIN
Part Life Cycle Code Not Recommended
Ihs Manufacturer FUJI ELECTRIC CO LTD
Part Package Code TO-3P(Q
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Avalanche Energy Rating (Eas) 1033.1 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 400 W
Pulsed Drain Current-Max (IDM) 112 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FMH28N50ES

This table gives cross-reference parts and alternative options found for FMH28N50ES. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMH28N50ES, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK1608 Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Panasonic Electronic Components FMH28N50ES vs 2SK1608
2SK2703 Power Field-Effect Transistor, 10A I(D), 450V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FM100, TO-3PF, 3 PIN Sanken Electric Co Ltd FMH28N50ES vs 2SK2703
2SK3702 18A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220ML, FULL PACK-3 onsemi FMH28N50ES vs 2SK3702
2SK2160 Power Field-Effect Transistor, 7A I(D), 200V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN SANYO Electric Co Ltd FMH28N50ES vs 2SK2160
APT5020BVFRG Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, Microsemi Corporation FMH28N50ES vs APT5020BVFRG
2SK3706 Power Field-Effect Transistor, 12A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 SANYO Electric Co Ltd FMH28N50ES vs 2SK3706
2SK1432 Power Field-Effect Transistor, 25A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 SANYO Electric Co Ltd FMH28N50ES vs 2SK1432
2SK2378 13A, 200V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220ML, TO-220ML, 3 PIN onsemi FMH28N50ES vs 2SK2378
2SK850 TRANSISTOR 35 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components FMH28N50ES vs 2SK850
APT41H50B Power Field-Effect Transistor, 41A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN Microsemi Corporation FMH28N50ES vs APT41H50B

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