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Transistors / RF Power Field-Effect Transistors / FLM7785-8F
Datasheets
FLM7785-8F by:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN

Part Details for FLM7785-8F by SUMITOMO ELECTRIC Industries Ltd

Overview of FLM7785-8F by SUMITOMO ELECTRIC Industries Ltd

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Applications Industrial Automation Healthcare Electronic Manufacturing

Part Details for FLM7785-8F

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FLM7785-8F Part Data Attributes

Parametric Data
FLM7785-8F SUMITOMO ELECTRIC Industries Ltd
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FLM7785-8F SUMITOMO ELECTRIC Industries Ltd RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SUMITOMO ELECTRIC INDUSTRIES LTD
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Manufacturer Package Code CASE IB
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 2.6 A
FET Technology JUNCTION
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for FLM7785-8F

This table gives cross-reference parts and alternative options found for FLM7785-8F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM7785-8F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FLM7785-8F FUJITSU Limited Check for Price RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FLM7785-8F vs FLM7785-8F
FLM7785-4F SUMITOMO ELECTRIC Industries Ltd Check for Price RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN FLM7785-8F vs FLM7785-4F
FLM7785-4C FUJITSU Semiconductor Limited Check for Price X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FLM7785-8F vs FLM7785-4C
FLM7785-4F FUJITSU Semiconductor Limited Check for Price RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FLM7785-8F vs FLM7785-4F
FLM7785-12F SUMITOMO ELECTRIC Industries Ltd Check for Price RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN FLM7785-8F vs FLM7785-12F
FLM7785-12F FUJITSU Semiconductor Limited Check for Price RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FLM7785-8F vs FLM7785-12F
FLM7785-8C FUJITSU Semiconductor Limited Check for Price X BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FLM7785-8F vs FLM7785-8C
FLM7785-8D FUJITSU Limited Check for Price RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FLM7785-8F vs FLM7785-8D
FLM7785-6F FUJITSU Limited Check for Price RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FLM7785-8F vs FLM7785-6F
FLM7785-4C FUJITSU Limited Check for Price RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FLM7785-8F vs FLM7785-4C

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