FLM4450-18F
Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN

Overview of FLM4450-18F by FUJITSU Limited

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Renewable Energy Robotics and Drones

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Part Data Attributes for FLM4450-18F by FUJITSU Limited

FLM4450-18F
FUJITSU Limited
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
FUJITSU LTD
Package Description
FLANGE MOUNT, R-CDFM-F2
Pin Count
2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.75
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
15 V
FET Technology
JUNCTION
Highest Frequency Band
C BAND
JESD-30 Code
R-CDFM-F2
Number of Elements
1
Number of Terminals
2
Operating Mode
DEPLETION MODE
Operating Temperature-Max
175 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
83.3 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE
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  1. FLM4450-18F
    FUJITSU Limited
    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN
    VS

Alternate Parts for FLM4450-18F

This table gives cross-reference parts and alternative options found for FLM4450-18F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM4450-18F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FLM4450-18F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM4450-18F vs FLM4450-18F
FLM4450-18F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM4450-18F vs FLM4450-18F
Part Number Description Manufacturer Compare
FLM4450-18DA C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM4450-18F vs FLM4450-18DA
FLM4450-18DA RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Limited FLM4450-18F vs FLM4450-18DA
FLM4450-25F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM4450-18F vs FLM4450-25F
TIM4951-16 TRANSISTOR RF POWER, FET, 2-16G1B, 3 PIN, FET RF Power Toshiba America Electronic Components FLM4450-18F vs TIM4951-16
FLM4450-8F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM4450-18F vs FLM4450-8F
FLM4450-8C C BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM4450-18F vs FLM4450-8C
FLM4450-8F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FUJITSU Limited FLM4450-18F vs FLM4450-8F
FLM4450-25F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 3 PIN FUJITSU Limited FLM4450-18F vs FLM4450-25F
FLM4450-12F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM4450-18F vs FLM4450-12F
FLM4450-18F RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IK, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM4450-18F vs FLM4450-18F

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