Datasheets
FLM1213-6F by:

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2

Part Details for FLM1213-6F by FUJITSU Semiconductor Limited

Overview of FLM1213-6F by FUJITSU Semiconductor Limited

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Applications Consumer Electronics

Part Details for FLM1213-6F

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FLM1213-6F Part Data Attributes

FLM1213-6F FUJITSU Semiconductor Limited
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FLM1213-6F FUJITSU Semiconductor Limited RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Part Life Cycle Code Obsolete
Ihs Manufacturer FUJITSU SEMICONDUCTOR AMERICA INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 4
Manufacturer Package Code CASE IA
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 15 V
Drain Current-Max (ID) 2.1 A
FET Technology JUNCTION
Highest Frequency Band KU BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for FLM1213-6F

This table gives cross-reference parts and alternative options found for FLM1213-6F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FLM1213-6F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FLM1213-6F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM1213-6F vs FLM1213-6F
Part Number Description Manufacturer Compare
FLM1213-4C KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM1213-6F vs FLM1213-4C
FLM1213-12F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM1213-6F vs FLM1213-12F
FLM1213-6F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM1213-6F vs FLM1213-6F
FLM1213-8F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN SUMITOMO ELECTRIC Device Innovations Inc FLM1213-6F vs FLM1213-8F
FLM1213-8C RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Limited FLM1213-6F vs FLM1213-8C
FLM1213-12F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM1213-6F vs FLM1213-12F
FLM1213-6F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 4 PIN FUJITSU Limited FLM1213-6F vs FLM1213-6F
FLM1213-8F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN SUMITOMO ELECTRIC Industries Ltd FLM1213-6F vs FLM1213-8F
FLM1213-4F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 FUJITSU Semiconductor Limited FLM1213-6F vs FLM1213-4F
FLM1213-12F RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN FUJITSU Limited FLM1213-6F vs FLM1213-12F

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