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Transistors RF Small Signal Field-Effect Transistors FHX35X

Transistors
FHX35X
Description: RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE

Overview of FHX35X by SUMITOMO ELECTRIC Device Innovations Inc

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for FHX35X by SUMITOMO ELECTRIC Device Innovations Inc
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Part Data Attributes for FHX35X by SUMITOMO ELECTRIC Device Innovations Inc
Parametric Data

FHX35X
SUMITOMO ELECTRIC Device Innovations Inc
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
EUDYNA DEVICES INC
Part Package Code
DIE
Package Description
DIE
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
LOW NOISE, HIGH RELIABILITY
Configuration
SINGLE
DS Breakdown Voltage-Min
4 V
FET Technology
HIGH ELECTRON MOBILITY
Highest Frequency Band
KU BAND
JESD-30 Code
R-XUUC-N
Number of Elements
1
Operating Mode
DEPLETION MODE
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Gain-Min (Gp)
8.5 dB
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE
Want to compare parts?
  1. FHX35X
    SUMITOMO ELECTRIC Device Innovations Inc
    RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
    VS

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