Part Details for FGH80N60FDTU by onsemi
Overview of FGH80N60FDTU by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Industrial Automation
Smart Cities
Aerospace and Defense
Energy and Power Systems
Agriculture Technology
Electronic Manufacturing
Renewable Energy
Price & Stock for FGH80N60FDTU
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
08N9402
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Newark | Igbt Single |Onsemi FGH80N60FDTU RoHS: Not Compliant Min Qty: 90 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for FGH80N60FDTU
FGH80N60FDTU CAD Models
FGH80N60FDTU Part Data Attributes
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FGH80N60FDTU
onsemi
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Datasheet
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Compare Parts:
FGH80N60FDTU
onsemi
IGBT, 600V, Field Stop, 450-TUBE
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Manufacturer Package Code | 340CK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 100 ns | |
| Gate-Emitter Thr Voltage-Max | 7 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 290 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 201 ns | |
| Turn-on Time-Nom (ton) | 74 ns |