Part Details for FGA60N65SMD by Fairchild Semiconductor Corporation
Overview of FGA60N65SMD by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FGA60N65SMD
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P | 32200 |
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$2.6380 / $3.9570 | Buy Now |
Part Details for FGA60N65SMD
FGA60N65SMD CAD Models
FGA60N65SMD Part Data Attributes
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FGA60N65SMD
Fairchild Semiconductor Corporation
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Datasheet
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FGA60N65SMD
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT, TO-3PN, SC-65, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-3PN | |
Package Description | ROHS COMPLIANT, TO-3PN, SC-65, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | LOW CONDUCTION LOSS | |
Collector Current-Max (IC) | 120 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 68 ns | |
Gate-Emitter Thr Voltage-Max | 6 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 600 W | |
Rise Time-Max (tr) | 70 ns | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON |