There are no models available for this part yet.
Overview of FF75R12RT4 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for FF75R12RT4 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| LCSC | IGBT Transistors / Modules ROHS | 23 |
|
$30.7028 / $31.5038 | Buy Now | ||
| MacroQuest Electronics | 6 |
|
RFQ |
CAD Models for FF75R12RT4 by Infineon Technologies AG
Part Data Attributes for FF75R12RT4 by Infineon Technologies AG
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Part Package Code
|
MODULE
|
|
Package Description
|
FLANGE MOUNT, R-XUFM-X5
|
|
Pin Count
|
7
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
Infineon
|
|
Case Connection
|
ISOLATED
|
|
Collector Current-Max (IC)
|
75 A
|
|
Collector-Emitter Voltage-Max
|
1200 V
|
|
Configuration
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JESD-30 Code
|
R-XUFM-X5
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
2
|
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Number of Terminals
|
5
|
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Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
UNSPECIFIED
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
395 W
|
|
Qualification Status
|
Not Qualified
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|
Surface Mount
|
NO
|
|
Terminal Form
|
UNSPECIFIED
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|
Terminal Position
|
UPPER
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
POWER CONTROL
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Nom (toff)
|
490 ns
|
|
Turn-on Time-Nom (ton)
|
185 ns
|
|
VCEsat-Max
|
2.15 V
|