Part Details for FDU6N20TU by Fairchild Semiconductor Corporation
Overview of FDU6N20TU by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for FDU6N20TU
FDU6N20TU CAD Models
FDU6N20TU Part Data Attributes
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FDU6N20TU
Fairchild Semiconductor Corporation
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Datasheet
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FDU6N20TU
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4.5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, I-PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDU6N20TU
This table gives cross-reference parts and alternative options found for FDU6N20TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDU6N20TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFI620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 | Fairchild Semiconductor Corporation | FDU6N20TU vs IRFI620B |
| IRFU220BTU_FP001 | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE, IPAK-3 | Fairchild Semiconductor Corporation | FDU6N20TU vs IRFU220BTU_FP001 |
| IRL620J69Z | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDU6N20TU vs IRL620J69Z |
| FQU7N20LTU | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.78ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FDU6N20TU vs FQU7N20LTU |
| IRF620AJ69Z | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDU6N20TU vs IRF620AJ69Z |