Part Details for FDS7288N3 by Fairchild Semiconductor Corporation
Overview of FDS7288N3 by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDS7288N3
Part # | Distributor | Description | Stock | Price | Buy | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 10 |
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$0.5000 / $0.7700 | Buy Now |
Part Details for FDS7288N3
FDS7288N3 CAD Models
FDS7288N3 Part Data Attributes
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FDS7288N3
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDS7288N3
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 20A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | FLMP, SO-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 151 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDS7288N3
This table gives cross-reference parts and alternative options found for FDS7288N3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS7288N3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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STL75N3LLZH5 | STMicroelectronics | Check for Price | 19A, 30V, 0.0078ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 | FDS7288N3 vs STL75N3LLZH5 |
FDS7066N7 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 23A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | FDS7288N3 vs FDS7066N7 |
BSC057N03LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | FDS7288N3 vs BSC057N03LSG |
BSC079N03SG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | FDS7288N3 vs BSC079N03SG |
BSC042N03LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | FDS7288N3 vs BSC042N03LSG |
FDMS7670 | Rochester Electronics LLC | Check for Price | 21A, 30V, 0.0038ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | FDS7288N3 vs FDMS7670 |
HAT2164H | Renesas Electronics Corporation | Check for Price | 60A, 30V, 0.0044ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | FDS7288N3 vs HAT2164H |
BSC052N03S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8 | FDS7288N3 vs BSC052N03S |
HAT2099H | Renesas Electronics Corporation | Check for Price | 50A, 30V, 0.0073ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 | FDS7288N3 vs HAT2099H |
BSC016N03LSG | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | FDS7288N3 vs BSC016N03LSG |