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Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54K3604
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:9.4A, Continuous Drain Current Id P Channel:9.4A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDS6898A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4900 | Buy Now |
DISTI #
82C2573
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Newark | Dual N Channel Mosfet, 20V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:9.4A, Continuous Drain Current Id P Channel:9.4A Rohs Compliant: Yes |Onsemi FDS6898A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.5160 | Buy Now |
DISTI #
FDS6898ACT-ND
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DigiKey | MOSFET 2N-CH 20V 9.4A 8SOIC Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8102 In Stock |
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$0.3955 / $1.0500 | Buy Now |
DISTI #
FDS6898A
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 791 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 4828 Partner Stock |
|
$0.3923 / $0.4683 | Buy Now |
DISTI #
FDS6898A
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 50000 Factory Stock |
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$0.3441 | Buy Now |
DISTI #
FDS6898A
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 4828 Factory Stock |
|
$0.3441 | Buy Now |
DISTI #
FDS6898A
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 4828 Factory Stock |
|
$0.3441 | Buy Now |
DISTI #
FDS6898A
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 4828 Factory Stock |
|
$0.3441 | Buy Now |
DISTI #
FDS6898A
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 9.4A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6898A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 4828 Factory Stock |
|
$0.3441 | Buy Now |
DISTI #
512-FDS6898A
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Mouser Electronics | MOSFETs SO-8 RoHS: Compliant | 13275 |
|
$0.4520 / $1.0500 | Buy Now |
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FDS6898A
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6898A
onsemi
Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ, 2500-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 9.4 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 38 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDS6898A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6898A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDS6898A_NL | Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6898A vs FDS6898A_NL |
FDS6898A | Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6898A vs FDS6898A |