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N-Channel Logic Level PowerTrenchTM MOSFET 30V, 6.5A 38mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78K5939
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Newark | N Channel Mosfet, 30V, 6.5A, Soic, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:6.5A, On Resistance Rds(On):0.038Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Onsemi FDS6630A Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
96K9882
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Newark | Mosfet Transistor, N Channel, 6.5 A, 30 V, 38 Mohm, 10 V, 1.7 V Rohs Compliant: Yes |Onsemi FDS6630A Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
FDS6630A
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Avnet Americas | Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel (Alt: FDS6630A) RoHS: Compliant Min Qty: 3334 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 3767 Partner Stock |
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$0.1860 / $0.2220 | Buy Now |
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Bristol Electronics | 1081 |
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RFQ | ||
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Bristol Electronics | 1408 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SO | 864 |
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$0.3340 / $0.8350 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 160 |
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$0.3750 / $1.2500 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 6.5A, 30V, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 7168 |
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$0.2226 / $0.2619 | Buy Now |
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Flip Electronics | Stock, ship today | 3767 |
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$0.1500 | RFQ |
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FDS6630A
onsemi
Buy Now
Datasheet
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Compare Parts:
FDS6630A
onsemi
N-Channel Logic Level PowerTrenchTM MOSFET 30V, 6.5A 38mΩ, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.038 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDS6630A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6630A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDS6630A | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6630A vs FDS6630A |
FDS6630AF011 | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDS6630A vs FDS6630AF011 |
FDS6630A_NL | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6630A vs FDS6630A_NL |
FDS6630AL86Z | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDS6630A vs FDS6630AL86Z |
FDS6630A | 6500mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | Rochester Electronics LLC | FDS6630A vs FDS6630A |
FDS6630AD84Z | Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | FDS6630A vs FDS6630AD84Z |