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N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ, SOIC-8, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1388
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Newark | Mosfet, N-Ch, 200V, 3.9A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.9V Rohs Compliant: Yes |Onsemi FDS2672 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2477 |
|
$0.8950 / $1.9400 | Buy Now |
DISTI #
20M1182
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Newark | N Channel Mosfet, 200V, 3.9A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.5W Rohs Compliant: Yes |Onsemi FDS2672 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.7860 / $1.0600 | Buy Now |
DISTI #
FDS2672CT-ND
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DigiKey | MOSFET N-CH 200V 3.9A 8SOIC Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7542 In Stock |
|
$0.7859 / $2.1300 | Buy Now |
DISTI #
FDS2672
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Avnet Americas | Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS2672) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.7397 / $0.7755 | Buy Now |
DISTI #
512-FDS2672
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Mouser Electronics | MOSFETs 200V 3.9A 70mOHMS NCH ULTRAFET RoHS: Compliant | 3107 |
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$0.7850 / $1.5900 | Buy Now |
DISTI #
E02:0323_00074766
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Arrow Electronics | Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks Date Code: 2431 | Europe - 2500 |
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$0.7513 | Buy Now |
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Future Electronics | N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Container: Reel |
32500 Reel |
|
$0.7150 / $0.7400 | Buy Now |
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Future Electronics | N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks Container: Reel |
17500 Reel |
|
$0.7400 / $0.7650 | Buy Now |
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Future Electronics | N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Container: Reel |
0 Reel |
|
$0.7400 / $0.7650 | Buy Now |
|
Future Electronics | N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 6 Weeks Container: Reel |
0 Reel |
|
$0.7400 / $0.7650 | Buy Now |
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FDS2672
onsemi
Buy Now
Datasheet
|
Compare Parts:
FDS2672
onsemi
N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ, SOIC-8, 2500-REEL
Select a part to compare: |
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | SOIC-8 | |
Package Description | SO-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 37.5 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 3.9 A | |
Drain-source On Resistance-Max | 0.148 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDS2672. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS2672, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FDS2672 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.9A I(D), 200V, 0.148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | FDS2672 vs FDS2672 |