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Part Details for FDP8880 by onsemi
Overview of FDP8880 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDP8880
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDP8880
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Avnet Americas | Trans MOSFET N-CH 30V 11A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8880) RoHS: Compliant Min Qty: 690 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 28800 Partner Stock |
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$0.4496 / $0.5366 | Buy Now |
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Bristol Electronics | 2400 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 30V, 0.0145OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 1920 |
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$0.5899 / $1.6855 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 11A, 30V, 0.0145ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 1396 |
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$0.4495 / $0.5288 | Buy Now |
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DISTI #
FDP8880
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TME | Transistor: N-MOSFET, unipolar, 30V, 48A, 55W, TO220AB Min Qty: 1 | 0 |
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$0.6250 / $0.9490 | RFQ |
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Flip Electronics | Stock | 200 |
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RFQ |
Part Details for FDP8880
FDP8880 CAD Models
FDP8880 Part Data Attributes
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FDP8880
onsemi
Buy Now
Datasheet
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Compare Parts:
FDP8880
onsemi
N-Channel PowerTrench® MOSFET 30V, 54A, 11.6mΩ, 800-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-220AB, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 31 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0145 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 55 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |