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Transistors Power Field-Effect Transistors FDMS7670

FDMS7670
Description: N-Channel PowerTrench® MOSFET 30V, 3.8mΩ, 3000-REEL

Overview of FDMS7670 by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FDMS7670 by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # 84W8863
Newark Mosfet, N Channel, 30V, 0.0029Ohm, 42A, Power 56-8, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:42A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:62W Rohs Compliant: Yes |Onsemi FDMS7670 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 2,500 $0.6520
$0.6520 Buy Now
DISTI # 07R8510
Newark Mosfet Transistor, N Channel, 42 A, 30 V, 0.0029 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDMS7670 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.6600
  • 6,000 $0.6000
  • 12,000 $0.5400
  • 18,000 $0.5200
  • 30,000 $0.5080
$0.5080 / $0.6600 Buy Now
DISTI # FDMS7670CT-ND
DigiKey MOSFET N-CH 30V 21A/42A 8PQFN Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5345
In Stock
  • 1 $1.3300
  • 10 $1.0910
  • 100 $0.8484
  • 500 $0.7191
  • 1,000 $0.5858
  • 3,000 $0.3778
$0.3778 / $1.3300 Buy Now
DISTI # FDMS7670
Avnet Americas Trans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7670) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 9000 Factory Stock
  • 3,000 $0.5920
  • 6,000 $0.5760
  • 12,000 $0.5600
  • 18,000 $0.5440
  • 24,000 $0.5280
  • 30,000 $0.5120
  • 300,000 $0.4960
$0.4960 / $0.5920 Buy Now
DISTI # 512-FDMS7670
Mouser Electronics MOSFET 30V 42A N-Channel PowerTrench RoHS: Compliant 7229
  • 1 $1.3300
  • 10 $1.0900
  • 100 $0.8470
  • 500 $0.7180
  • 1,000 $0.5850
  • 3,000 $0.5720
$0.5720 / $1.3300 Buy Now
Future Electronics PT7 30/20V NCH POWERTRENCH MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 3,000 $0.5800
  • 6,000 $0.5600
$0.5600 / $0.5800 Buy Now
Rochester Electronics Power Field-Effect Transistor, 21A, 30V, 0.0038ohm, N-Channel, MOSFET, MO-240AA RoHS: Compliant Status: Active Min Qty: 1 3000
  • 1 $0.5833
  • 25 $0.5716
  • 100 $0.5483
  • 500 $0.5250
  • 1,000 $0.4958
$0.4958 / $0.5833 Buy Now
DISTI # FDMS7670
TME Transistor: N-MOSFET, unipolar, 30V, 42A, Idm: 150A, 62W, Power56 Min Qty: 1 0
  • 1 $0.8390
  • 5 $0.7530
  • 25 $0.6670
  • 100 $0.6020
  • 500 $0.5590
$0.5590 / $0.8390 RFQ
DISTI # FDMS7670
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $0.5000
$0.5000 Buy Now
Chip 1 Exchange INSTOCK 62400
RFQ
DISTI # FDMS7670
Avnet Asia Trans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R (Alt: FDMS7670) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days 0
  • 3,000 $0.5263
  • 6,000 $0.5195
  • 9,000 $0.5128
  • 15,000 $0.5063
  • 30,000 $0.4938
  • 75,000 $0.4819
  • 150,000 $0.4706
$0.4706 / $0.5263 Buy Now
DISTI # FDMS7670
Avnet Silica Trans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R (Alt: FDMS7670) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS7670
EBV Elektronik Trans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R (Alt: FDMS7670) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 9000
RFQ

CAD Models for FDMS7670 by onsemi
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Part Data Attributes for FDMS7670 by onsemi
Parametric Data

FDMS7670
onsemi
Buy Now
-
-
Pbfree Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ONSEMI
Package Description
QFN-8
Manufacturer Package Code
483AE
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
16 Weeks
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
144 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
105 A
Drain-source On Resistance-Max
0.0038 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
115 pF
JEDEC-95 Code
MO-240AA
JESD-30 Code
R-PDSO-N5
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
5
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
62 W
Pulsed Drain Current-Max (IDM)
150 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
NO LEAD
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
60 ns
Turn-on Time-Max (ton)
38 ns
Want to compare parts?
  1. FDMS7670
    onsemi
    N-Channel PowerTrench® MOSFET 30V, 3.8mΩ, 3000-REEL
    VS

Alternate Parts for FDMS7670

This table gives cross-reference parts and alternative options found for FDMS7670. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMS7670, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSC052N03SG Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG FDMS7670 vs BSC052N03SG
BSC057N03LSGXT Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG FDMS7670 vs BSC057N03LSGXT
FDS7066N7 Power Field-Effect Transistor, 23A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 Fairchild Semiconductor Corporation FDMS7670 vs FDS7066N7
BSC042N03LSGATMA1 Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG FDMS7670 vs BSC042N03LSGATMA1
FDS7088SN3 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 Rochester Electronics LLC FDMS7670 vs FDS7088SN3
BSC029N025SG 24A, 25V, 0.0045ohm, N-CHANNEL, Si, POWER, MOSFET, GREEN, PLASTIC, TDSON-8 Rochester Electronics LLC FDMS7670 vs BSC029N025SG
STL100NH3LL 25A, 30V, 0.005ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 STMicroelectronics FDMS7670 vs STL100NH3LL
HAT2134H 60A, 20V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 Renesas Electronics Corporation FDMS7670 vs HAT2134H
BSC052N03S Power Field-Effect Transistor, 18A I(D), 30V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8 Infineon Technologies AG FDMS7670 vs BSC052N03S
HAT2160H 60A, 20V, 0.0041ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5 Renesas Electronics Corporation FDMS7670 vs HAT2160H

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