FCPF11N65
Description: Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Overview of FCPF11N65 by onsemi

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  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for FCPF11N65 by onsemi

Part # Manufacturer Description Stock Price Buy
DISTI # FCPF11N65-ND
DigiKey MOSFET N-CH 650V 11A TO220F Lead time: 14 Weeks Container: Tube Temporarily Out of Stock
Buy Now
DISTI # FCPF11N65
Avnet Americas FG SUPERFET - Bulk (Alt: FCPF11N65) RoHS: Compliant Min Qty: 228 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk 900 Partner Stock
  • 228 $1.6280
  • 230 $1.5840
  • 460 $1.5400
  • 1,200 $1.4960
  • 2,300 $1.4520
  • 12,000 $1.4080
  • 23,000 $1.3640
$1.3640 / $1.6280 Buy Now

CAD Models for FCPF11N65 by onsemi
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Part Data Attributes for FCPF11N65 by onsemi

FCPF11N65
onsemi
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ONSEMI
Package Description
SC-91A, TO-220F, 3 PIN
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Avalanche Energy Rating (Eas)
340 mJ
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain Current-Max (ID)
11 A
Drain-source On Resistance-Max
0.38 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
63 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
36 W
Pulsed Drain Current-Max (IDM)
33 A
Surface Mount
NO
Terminal Finish
Matte Tin (Sn) - annealed
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
370 ns
Turn-on Time-Max (ton)
285 ns
Want to compare parts?
  1. FCPF11N65
    onsemi
    Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    VS

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