Part Details for F1T6GHB0 by Taiwan Semiconductor
Overview of F1T6GHB0 by Taiwan Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for F1T6GHB0
F1T6GHB0 CAD Models
F1T6GHB0 Part Data Attributes
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F1T6GHB0
Taiwan Semiconductor
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Datasheet
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F1T6GHB0
Taiwan Semiconductor
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TAIWAN SEMICONDUCTOR CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Additional Feature | HIGH RELIABILITY, LOW POWER LOSS | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Element Material | SILICON | |
| Diode Type | RECTIFIER DIODE | |
| JESD-30 Code | O-PALF-W2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Phases | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Output Current-Max | 1 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reference Standard | AEC-Q101 | |
| Rep Pk Reverse Voltage-Max | 800 V | |
| Reverse Recovery Time-Max | 0.5 µs | |
| Surface Mount | NO | |
| Terminal Finish | TIN | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 |
Alternate Parts for F1T6GHB0
This table gives cross-reference parts and alternative options found for F1T6GHB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of F1T6GHB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UF4006_NL | Rectifier Diode, Schottky, 1 Element, 1A, 800V V(RRM), Silicon, LEAD FREE, DO-41 | Fairchild Semiconductor Corporation | F1T6GHB0 vs UF4006_NL |
| 15DF8TA2B1 | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, MINIATURE PACKAGE-2 | Nihon Inter Electronics Corporation | F1T6GHB0 vs 15DF8TA2B1 |
| DSK10J-BT | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon | SANYO Electric Co Ltd | F1T6GHB0 vs DSK10J-BT |
| SM4006-B | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2 | Rectron Semiconductor | F1T6GHB0 vs SM4006-B |
| 1N4006SGR0 | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon | Taiwan Semiconductor | F1T6GHB0 vs 1N4006SGR0 |
| FR106SGP0 | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon | Taiwan Semiconductor | F1T6GHB0 vs FR106SGP0 |
| D1N80 | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, CASE AX057, 2 PIN | Shindengen Electronic Manufacturing Co Ltd | F1T6GHB0 vs D1N80 |
| SM4006-W | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2 | Rectron Semiconductor | F1T6GHB0 vs SM4006-W |
| SX5620US | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS, MELF-A, 2 PIN | Sensitron Semiconductors | F1T6GHB0 vs SX5620US |
| FSM106-W | Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MELF-2 | Rectron Semiconductor | F1T6GHB0 vs FSM106-W |