Part Details for EPC8009 by Efficient Power Conversion
Overview of EPC8009 by Efficient Power Conversion
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for EPC8009
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
917-1078-1-ND
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DigiKey | GANFET N-CH 65V 4A DIE Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7644 In Stock |
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$1.6375 / $3.5100 | Buy Now |
Part Details for EPC8009
EPC8009 CAD Models
EPC8009 Part Data Attributes
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EPC8009
Efficient Power Conversion
Buy Now
Datasheet
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EPC8009
Efficient Power Conversion
Power Field-Effect Transistor, 2.7A I(D), 65V, 0.13ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-6
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
Package Description | UNCASED CHIP, R-XXUC-X6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 2.7 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XXUC-X6 | |
JESD-609 Code | e2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 7.5 A | |
Terminal Finish | TIN SILVER | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UNSPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | GALLIUM NITRIDE |
Alternate Parts for EPC8009
This table gives cross-reference parts and alternative options found for EPC8009. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EPC8009, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDSS2407 | N-Channel Logic Level Gate Dual MOSFET 60V, 3.3A, 132mΩ, 2500-REEL, Automotive Qualified | onsemi | EPC8009 vs FDSS2407 |
FDSS2407 | Power Field-Effect Transistor, 3.3A I(D), 62V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | EPC8009 vs FDSS2407 |
FDSS2407_NL | Power Field-Effect Transistor, 3.3A I(D), 62V, 0.11ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | Fairchild Semiconductor Corporation | EPC8009 vs FDSS2407_NL |