Part Details for EPC2104ENGR by Efficient Power Conversion
Overview of EPC2104ENGR by Efficient Power Conversion
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for EPC2104ENGR
EPC2104ENGR CAD Models
EPC2104ENGR Part Data Attributes:
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EPC2104ENGR
Efficient Power Conversion
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Datasheet
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EPC2104ENGR
Efficient Power Conversion
Power Field-Effect Transistor, 23A I(D), 100V, 0.0063ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-75
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
| Package Description | UNCASED CHIP, R-XXUC-X75 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.0063 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XXUC-X75 | |
| Number of Elements | 2 | |
| Number of Terminals | 75 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 165 A | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UNSPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | GALLIUM NITRIDE |
Alternate Parts for EPC2104ENGR
This table gives cross-reference parts and alternative options found for EPC2104ENGR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EPC2104ENGR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDMS86101A | Power Field-Effect Transistor, 13A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | EPC2104ENGR vs FDMS86101A |
| CSD19531Q5A | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150 | Texas Instruments | EPC2104ENGR vs CSD19531Q5A |
| CSD19531Q5AT | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150 | Texas Instruments | EPC2104ENGR vs CSD19531Q5AT |