Part Details for EPC2010C by Efficient Power Conversion
Overview of EPC2010C by Efficient Power Conversion
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for EPC2010C
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
917-1085-1-ND
|
DigiKey | GANFET N-CH 200V 22A DIE OUTLINE Min Qty: 1 Lead time: 16 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5792 In Stock |
|
$3.4880 / $6.5600 | Buy Now |
Part Details for EPC2010C
EPC2010C CAD Models
EPC2010C Part Data Attributes
|
EPC2010C
Efficient Power Conversion
Buy Now
Datasheet
|
Compare Parts:
EPC2010C
Efficient Power Conversion
Power Field-Effect Transistor, 22A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7
|
Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | |
Package Description | UNCASED CHIP, R-XXUC-X7 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Efficient Power Conversion | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 22 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2.7 pF | |
JESD-30 Code | R-XXUC-X7 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 90 A | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UNSPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | GALLIUM NITRIDE |