Datasheets
EDS1216AHTA-6B-E by: Elpida Memory Inc

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54

Part Details for EDS1216AHTA-6B-E by Elpida Memory Inc

Overview of EDS1216AHTA-6B-E by Elpida Memory Inc

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Part Details for EDS1216AHTA-6B-E

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EDS1216AHTA-6B-E Part Data Attributes

EDS1216AHTA-6B-E Elpida Memory Inc
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EDS1216AHTA-6B-E Elpida Memory Inc Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, ROHS COMPLIANT, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ELPIDA MEMORY INC
Part Package Code TSOP2
Package Description TSOP2, TSOP54,.46,32
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e6
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.09 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16 mm

Alternate Parts for EDS1216AHTA-6B-E

This table gives cross-reference parts and alternative options found for EDS1216AHTA-6B-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDS1216AHTA-6B-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS42S16800E-6TL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc EDS1216AHTA-6B-E vs IS42S16800E-6TL
HY57V281620ETP-6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc EDS1216AHTA-6B-E vs HY57V281620ETP-6
IS42S16800F-6TL Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc EDS1216AHTA-6B-E vs IS42S16800F-6TL
HY57V281620FTP-6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 SK Hynix Inc EDS1216AHTA-6B-E vs HY57V281620FTP-6
HY57V281620AT-6 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc EDS1216AHTA-6B-E vs HY57V281620AT-6
Part Number Description Manufacturer Compare
HM5212165FLTD-A60 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Hitachi Ltd EDS1216AHTA-6B-E vs HM5212165FLTD-A60
KM44S32030T-G10 Synchronous DRAM, 32MX4, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54 Samsung Semiconductor EDS1216AHTA-6B-E vs KM44S32030T-G10
IS42S16800E-7TL-TR Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc EDS1216AHTA-6B-E vs IS42S16800E-7TL-TR
HYB39SC128169EE-7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, GREEN, PLASTIC, TSOP2-54 Qimonda AG EDS1216AHTA-6B-E vs HYB39SC128169EE-7
MT48LC8M16A2TG-75IT:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc EDS1216AHTA-6B-E vs MT48LC8M16A2TG-75IT:G
HM5212165FLTD-A60 Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc EDS1216AHTA-6B-E vs HM5212165FLTD-A60
HY57W2A1620HCT-S Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 SK Hynix Inc EDS1216AHTA-6B-E vs HY57W2A1620HCT-S
GM72V28441ALT Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP-54 LG Semicon Co Ltd EDS1216AHTA-6B-E vs GM72V28441ALT
V54C3128404VCLI10E Synchronous DRAM, 32MX4, 6ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 ProMOS Technologies Inc EDS1216AHTA-6B-E vs V54C3128404VCLI10E
TC59SM704AFTL-80 IC 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components EDS1216AHTA-6B-E vs TC59SM704AFTL-80

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