Memory
EDE1116ACBG-6E-E
Elpida Memory Inc
Description: DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84

Overview of EDE1116ACBG-6E-E by Elpida Memory Inc

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Where used in Applications: Industrial Automation Healthcare Renewable Energy Robotics and Drones

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Part Data Attributes for EDE1116ACBG-6E-E by Elpida Memory Inc

EDE1116ACBG-6E-E
Elpida Memory Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ELPIDA MEMORY INC
Part Package Code
BGA
Package Description
TFBGA, BGA84,9X15,32
Pin Count
84
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.32
Access Mode
MULTI BANK PAGE BURST
Access Time-Max
0.45 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
333 MHz
I/O Type
COMMON
Interleaved Burst Length
4,8
JESD-30 Code
R-PBGA-B84
JESD-609 Code
e1
Length
13 mm
Memory Density
1073741824 bit
Memory IC Type
DDR2 DRAM
Memory Width
16
Number of Functions
1
Number of Ports
1
Number of Terminals
84
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
Organization
64MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA84,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
4,8
Standby Current-Max
0.01 A
Supply Current-Max
0.31 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
11 mm
Want to compare parts?
  1. EDE1116ACBG-6E-E
    Elpida Memory Inc
    DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
    VS

Alternate Parts for EDE1116ACBG-6E-E

This table gives cross-reference parts and alternative options found for EDE1116ACBG-6E-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDE1116ACBG-6E-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
EDE1116ACSE-6E-E Synchronous DRAM, 64MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Elpida Memory Inc EDE1116ACBG-6E-E vs EDE1116ACSE-6E-E
EDE1116ACSE-6ELI-E DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 Elpida Memory Inc EDE1116ACBG-6E-E vs EDE1116ACSE-6ELI-E
Part Number Description Manufacturer Compare
V59C1G01168QBLJ19A DDR DRAM, 64MX16, CMOS, PBGA84, GREEN, FBGA-84 ProMOS Technologies Inc EDE1116ACBG-6E-E vs V59C1G01168QBLJ19A
V59C1G01168QBUJ5H DDR DRAM, 64MX16, CMOS, PBGA84, GREEN, FBGA-84 ProMOS Technologies Inc EDE1116ACBG-6E-E vs V59C1G01168QBUJ5H
V59C1G01168QBUF37H DDR DRAM, 64MX16, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 ProMOS Technologies Inc EDE1116ACBG-6E-E vs V59C1G01168QBUF37H
MT47H64M16HR-5E:E DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA84, 8 X 12.50 MM, LEAD FREE, FBGA-84 Micron Technology Inc EDE1116ACBG-6E-E vs MT47H64M16HR-5E:E
V59C1G01168QBLJ25H DDR DRAM, 64MX16, CMOS, PBGA84, GREEN, FBGA-84 ProMOS Technologies Inc EDE1116ACBG-6E-E vs V59C1G01168QBLJ25H
NT5TU64M16DG-37B DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA84, GREEN, BGA-84 Nanya Technology Corporation EDE1116ACBG-6E-E vs NT5TU64M16DG-37B
V59C1G01168QBLP19AH DDR DRAM, 64MX16, CMOS, PBGA84, GREEN, FBGA-84 ProMOS Technologies Inc EDE1116ACBG-6E-E vs V59C1G01168QBLP19AH
MT47H64M16HW-187EAT:E DDR DRAM, 64MX16, 0.35ns, CMOS, PBGA84, 8 X 12.50 MM, FBGA-84 Micron Technology Inc EDE1116ACBG-6E-E vs MT47H64M16HW-187EAT:E
MT47H32M16GC-3ELAT:B DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84, 12 X 12.50 MM, FBGA-84 Micron Technology Inc EDE1116ACBG-6E-E vs MT47H32M16GC-3ELAT:B
V59C1G01168QBUF25H DDR DRAM, 64MX16, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 ProMOS Technologies Inc EDE1116ACBG-6E-E vs V59C1G01168QBUF25H

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