Part Details for EDD5108AGTA-7BLI-E by Elpida Memory Inc
Overview of EDD5108AGTA-7BLI-E by Elpida Memory Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for EDD5108AGTA-7BLI-E
EDD5108AGTA-7BLI-E CAD Models
EDD5108AGTA-7BLI-E Part Data Attributes
|
|
EDD5108AGTA-7BLI-E
Elpida Memory Inc
Buy Now
Datasheet
|
Compare Parts:
EDD5108AGTA-7BLI-E
Elpida Memory Inc
DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ELPIDA MEMORY INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 66 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.75 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e6 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 64MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 50 | |
| Width | 10.16 mm |
Alternate Parts for EDD5108AGTA-7BLI-E
This table gives cross-reference parts and alternative options found for EDD5108AGTA-7BLI-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EDD5108AGTA-7BLI-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HYB25D512800ATL-7 | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 | Infineon Technologies AG | EDD5108AGTA-7BLI-E vs HYB25D512800ATL-7 |
| MT46V64M8P-75LAT:F | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | EDD5108AGTA-7BLI-E vs MT46V64M8P-75LAT:F |
| K4H510838B-ULA20 | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 | Samsung Semiconductor | EDD5108AGTA-7BLI-E vs K4H510838B-ULA20 |
| MT46V64M8TG-75AT:D | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | EDD5108AGTA-7BLI-E vs MT46V64M8TG-75AT:D |
| MT46V64M8TG-75DM:D | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | EDD5108AGTA-7BLI-E vs MT46V64M8TG-75DM:D |
| V58C512804SBLI-75 | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | EDD5108AGTA-7BLI-E vs V58C512804SBLI-75 |
| MT46V64M8STG-75Z:G | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | EDD5108AGTA-7BLI-E vs MT46V64M8STG-75Z:G |
| HYB25D512800AE-7F | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | EDD5108AGTA-7BLI-E vs HYB25D512800AE-7F |
| V58C512804SBT-75 | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | EDD5108AGTA-7BLI-E vs V58C512804SBT-75 |
| MT46V64M8TG-75ELAT:D | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | EDD5108AGTA-7BLI-E vs MT46V64M8TG-75ELAT:D |