Datasheets
DU2880V by:

2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

Part Details for DU2880V by TE Connectivity

Overview of DU2880V by TE Connectivity

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Part Details for DU2880V

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DU2880V Part Data Attributes

DU2880V TE Connectivity
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DU2880V TE Connectivity 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer TE CONNECTIVITY LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.75
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 16 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 206 W
Power Gain-Min (Gp) 13 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for DU2880V

This table gives cross-reference parts and alternative options found for DU2880V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2880V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DU2880U VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2880V vs DU2880U
BLF246 RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc DU2880V vs BLF246
DU2860T VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2880V vs DU2860T
BLF346 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-6, FET RF Power NXP Semiconductors DU2880V vs BLF346
MRF172 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC DU2880V vs MRF172
MRF173 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN TE Connectivity DU2880V vs MRF173
BLF147 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors DU2880V vs BLF147
DU2860U RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM DU2880V vs DU2860U
BLF246,112 BLF246 NXP Semiconductors DU2880V vs BLF246,112
MRF173 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc DU2880V vs MRF173

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