Part Details for DU2880V by TE Connectivity
Overview of DU2880V by TE Connectivity
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for DU2880V
DU2880V CAD Models
DU2880V Part Data Attributes
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DU2880V
TE Connectivity
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Datasheet
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DU2880V
TE Connectivity
2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | TE CONNECTIVITY LTD | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 8 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 16 pF | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-CDFM-F8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 200 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 206 W | |
Power Gain-Min (Gp) | 13 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for DU2880V
This table gives cross-reference parts and alternative options found for DU2880V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2880V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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DU2880U | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | TE Connectivity | DU2880V vs DU2880U |
BLF246 | RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | DU2880V vs BLF246 |
DU2860T | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | TE Connectivity | DU2880V vs DU2860T |
BLF346 | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, FM-6, FET RF Power | NXP Semiconductors | DU2880V vs BLF346 |
MRF172 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | Motorola Mobility LLC | DU2880V vs MRF172 |
MRF173 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN | TE Connectivity | DU2880V vs MRF173 |
BLF147 | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power | NXP Semiconductors | DU2880V vs BLF147 |
DU2860U | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | MACOM | DU2880V vs DU2860U |
BLF246,112 | BLF246 | NXP Semiconductors | DU2880V vs BLF246,112 |
MRF173 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 | Advanced Semiconductor Inc | DU2880V vs MRF173 |