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DTC124EUA by:

Transistor,

Part Details for DTC124EUA by Galaxy Semi-Conductor Co Ltd

Overview of DTC124EUA by Galaxy Semi-Conductor Co Ltd

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Applications Consumer Electronics Audio and Video Systems

Part Details for DTC124EUA

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DTC124EUA Part Data Attributes

DTC124EUA Galaxy Semi-Conductor Co Ltd
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DTC124EUA Galaxy Semi-Conductor Co Ltd Transistor,
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature BUILT IN BAIS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.03 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 56
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

Alternate Parts for DTC124EUA

This table gives cross-reference parts and alternative options found for DTC124EUA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DTC124EUA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DTC124EE Small Signal Bipolar Transistor, Galaxy Semi-Conductor Co Ltd DTC124EUA vs DTC124EE
DTC124EUA NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 Galaxy Microelectronics DTC124EUA vs DTC124EUA
DTC124EEFRATL Small Signal Bipolar Transistor, ROHM Semiconductor DTC124EUA vs DTC124EEFRATL
Part Number Description Manufacturer Compare
DTC124EEFRATL Small Signal Bipolar Transistor, ROHM Semiconductor DTC124EUA vs DTC124EEFRATL
DTC124EUA NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 Galaxy Microelectronics DTC124EUA vs DTC124EUA

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