Part Details for DTC114EE by Galaxy Microelectronics
Overview of DTC114EE by Galaxy Microelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for DTC114EE
DTC114EE CAD Models
DTC114EE Part Data Attributes
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DTC114EE
Galaxy Microelectronics
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Datasheet
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DTC114EE
Galaxy Microelectronics
NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | BUILT IN BIAS RESISTANCE RATIO IS 1 | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 50 V | |
Configuration | SINGLE WITH BUILT-IN RESISTOR | |
DC Current Gain-Min (hFE) | 30 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 250 MHz |
Alternate Parts for DTC114EE
This table gives cross-reference parts and alternative options found for DTC114EE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DTC114EE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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DTC114ECA | NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23 | Galaxy Microelectronics | DTC114EE vs DTC114ECA |
DTC114EM-C | Small Signal Bipolar Transistor | Secos Corporation | DTC114EE vs DTC114EM-C |
DTA114EUAF2 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | Yangzhou Yangjie Electronics Co Ltd | DTC114EE vs DTA114EUAF2 |
DTC143XCAF2 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | Yangzhou Yangjie Electronics Co Ltd | DTC114EE vs DTC143XCAF2 |
DTC143XSA-C | Small Signal Bipolar Transistor | Secos Corporation | DTC114EE vs DTC143XSA-C |
DTC114ECA-C | Small Signal Bipolar Transistor | Secos Corporation | DTC114EE vs DTC114ECA-C |
DTA114ECA | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | Yangzhou Yangjie Electronics Co Ltd | DTC114EE vs DTA114ECA |
DTC143XCA | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | Yangzhou Yangjie Electronics Co Ltd | DTC114EE vs DTC143XCA |
DTC114EUA-C | Small Signal Bipolar Transistor | Secos Corporation | DTC114EE vs DTC114EUA-C |
DTA114EE | PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523 | Galaxy Microelectronics | DTC114EE vs DTA114EE |