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DTA143EUA by:

Small Signal Bipolar Transistor

Part Details for DTA143EUA by Taiwan Semiconductor

Overview of DTA143EUA by Taiwan Semiconductor

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Applications Education and Research Industrial Automation Electronic Manufacturing

Part Details for DTA143EUA

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DTA143EUA Part Data Attributes

DTA143EUA Taiwan Semiconductor
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DTA143EUA Taiwan Semiconductor Small Signal Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz

Alternate Parts for DTA143EUA

This table gives cross-reference parts and alternative options found for DTA143EUA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DTA143EUA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DTC114ECA NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23 Galaxy Microelectronics DTA143EUA vs DTC114ECA
DTC114EM-C Small Signal Bipolar Transistor Secos Corporation DTA143EUA vs DTC114EM-C
DTA114EUAF2 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd DTA143EUA vs DTA114EUAF2
DTC143XCAF2 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd DTA143EUA vs DTC143XCAF2
DTC143XSA-C Small Signal Bipolar Transistor Secos Corporation DTA143EUA vs DTC143XSA-C
DTC114ECA-C Small Signal Bipolar Transistor Secos Corporation DTA143EUA vs DTC114ECA-C
DTA114ECA Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Yangzhou Yangjie Electronics Co Ltd DTA143EUA vs DTA114ECA
DTC143XCA Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Yangzhou Yangjie Electronics Co Ltd DTA143EUA vs DTC143XCA
DTC114EUA-C Small Signal Bipolar Transistor Secos Corporation DTA143EUA vs DTC114EUA-C
DTA114EE PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523 Galaxy Microelectronics DTA143EUA vs DTA114EE

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