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Power Field-Effect Transistor
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMT6010LFG-13CT-ND
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DigiKey | MOSFET N-CH 60V 13A PWRDI3333 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2241 In Stock |
|
$0.2625 / $0.9200 | Buy Now |
DISTI #
DMT6010LFG-13
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Avnet Americas | Trans MOSFET N-CH 60V 13A 8-Pin PowerDI T/R - Tape and Reel (Alt: DMT6010LFG-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 6000 Factory Stock |
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$0.3128 | Buy Now |
DISTI #
621-DMT6010LFG-13
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Mouser Electronics | MOSFETs 60V N-Ch Enh Mode 22Vgss 2090pF 41.3nC RoHS: Compliant | 3000 |
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$0.3000 / $0.8900 | Buy Now |
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Future Electronics | 60V 30A 0.0075 Ohm N-ch PowerDI3333-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.2600 / $0.2750 | Buy Now |
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Future Electronics | 60V 30A 0.0075 Ohm N-ch PowerDI3333-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
|
$0.2600 / $0.2750 | Buy Now |
DISTI #
DMT6010LFG-13
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Avnet Silica | Trans MOSFET N-CH 60V 13A 8-Pin PowerDI T/R (Alt: DMT6010LFG-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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New Advantage Corporation | POWERDI3333-8/N-CHANNEL ENHANCEMENT MODE MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 15000 |
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$0.3854 / $0.4165 | Buy Now |
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DMT6010LFG-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMT6010LFG-13
Diodes Incorporated
Power Field-Effect Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.0115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 38.5 pF | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 41 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |