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Part Details for DMN63D8LDWQ-7 by Diodes Incorporated
Overview of DMN63D8LDWQ-7 by Diodes Incorporated
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMN63D8LDWQ-7
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
28AK8643
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Newark | Mosfet, Dual, N-Ch, 30V, 0.22A Rohs Compliant: Yes |Diodes Inc. DMN63D8LDWQ-7 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 510 |
|
$0.0280 | Buy Now |
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DISTI #
DMN63D8LDWQ-7DICT-ND
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DigiKey | MOSFET 2N-CH 30V 0.22A SOT363 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3731 In Stock |
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$0.0367 / $0.2000 | Buy Now |
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DISTI #
DMN63D8LDWQ-7
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Avnet Americas | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Tape and Reel (Alt: DMN63D8LDWQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 1989000 Factory Stock |
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$0.0286 | Buy Now |
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DISTI #
621-DMN63D8LDWQ-7
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Mouser Electronics | MOSFETs Dual N-Ch Enh FET 30Vdss 20Vdss 800mA RoHS: Compliant | 49652 |
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$0.0360 / $0.2000 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 27000Reel |
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$0.0360 / $0.0412 | Buy Now |
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Future Electronics | Trans MOSFET N-CH 30V 0.26A Automotive 6-Pin SOT-363 T/R RoHS: Compliant pbFree: Yes Min Qty: 15000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0360 / $0.0412 | Buy Now |
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Bristol Electronics | 1296 |
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RFQ | ||
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DISTI #
DMN63D8LDWQ-7
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TME | Transistor: N-MOSFET x2, unipolar, 30V, 0.26A, 0.3W, SOT363, ESD Min Qty: 1 | 5600 |
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$0.0420 / $0.2019 | Buy Now |
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NexGen Digital | 280802 |
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RFQ | ||
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DISTI #
DMN63D8LDWQ-7
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Avnet Asia | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET (Alt: DMN63D8LDWQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days | 3000 |
|
$0.0260 / $0.0315 | Buy Now |
Part Details for DMN63D8LDWQ-7
DMN63D8LDWQ-7 CAD Models
DMN63D8LDWQ-7 Part Data Attributes
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DMN63D8LDWQ-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN63D8LDWQ-7
Diodes Incorporated
MOSFET 2N-CH 30V 0.22A SOT363
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Description | MOSFET Dual N-Ch Enh FET 30Vdss 20Vdss 800mA | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Samacsys Modified On | 2024-06-25 08:07:14 | |
| Category CO2 Kg | 8.8 | |
| Compliance Temperature Grade | Military: -55C to +150C | |
| EU RoHS Version | RoHS 2 (2015/863/EU) | |
| Candidate List Date | 2024-06-27 | |
| EFUP | e | |
| Conflict Mineral Status | DRC Conflict Free | |
| Conflict Mineral Status Source | CMRT V6.40 | |
| Qualifications | AEC-Q101 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 0.22 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.4 W | |
| Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for DMN63D8LDWQ-7
This table gives cross-reference parts and alternative options found for DMN63D8LDWQ-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN63D8LDWQ-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PJ4N3KDW | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6 | PanJit Semiconductor | DMN63D8LDWQ-7 vs PJ4N3KDW |
| PJ4N3KDWT/R13 | Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-6 | PanJit Semiconductor | DMN63D8LDWQ-7 vs PJ4N3KDWT/R13 |
| DMN63D8LDW-7 | Small Signal Field-Effect Transistor, 0.22A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | Diodes Incorporated | DMN63D8LDWQ-7 vs DMN63D8LDW-7 |