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Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMN3024SFG-7CT-ND
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DigiKey | MOSFET N-CH 30V 7.5A PWRDI3333-8 Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2365 In Stock |
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$0.1149 / $0.4900 | Buy Now |
DISTI #
DMN3024SFG-7
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Avnet Americas | Trans MOSFET N-CH 30V 7.5A 8-Pin PowerDI 3333-8 T/R - Tape and Reel (Alt: DMN3024SFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 20000 Factory Stock |
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$0.1133 / $0.1499 | Buy Now |
DISTI #
621-DMN3024SFG-7
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Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30 PowerD3333-8,2K RoHS: Compliant | 3036 |
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$0.1320 / $0.4400 | Buy Now |
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Future Electronics | MOSFET MOSFET BVDSS 25V-30 PowerD3333-8,2K RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks Container: Reel | 0Reel |
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$0.1130 / $0.1240 | Buy Now |
DISTI #
DMN3024SFG-7
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Avnet Silica | Trans MOSFET N-CH 30V 7.5A 8-Pin PowerDI 3333-8 T/R (Alt: DMN3024SFG-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days | Silica - 2000 |
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Buy Now | |
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LCSC | 30V 7.5A 900mW 23m 2.4V250uA 1 N-Channel PowerDI3333-8 MOSFETs ROHS | 50 |
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$0.1681 / $0.1775 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2000 | 2000 |
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$0.1595 | Buy Now |
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DMN3024SFG-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN3024SFG-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | SMALL OUTLINE, S-PDSO-N5 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 6.3 A | |
Drain-source On Resistance-Max | 0.023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.2 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |