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Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006H4-3, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86AK4767
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Newark | Mosfet, N-Ch, 20V, 1.3A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN2300UFB4-7B RoHS: Compliant Min Qty: 10000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0730 | Buy Now |
DISTI #
82Y6574
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Newark | Mosfet, N-Ch, 20V, X2Dfn1006-3, Transistor Polarity:N Channel, Continuous Drain Current Id:1.3A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.175Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:950Mv, Power Rohs Compliant: Yes |Diodes Inc. DMN2300UFB4-7B RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.0910 / $0.3230 | Buy Now |
DISTI #
DMN2300UFB4-7BDICT-ND
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DigiKey | MOSFET N-CH 20V 1.3A 3DFN Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
263930 In Stock |
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$0.0493 / $0.2500 | Buy Now |
DISTI #
DMN2300UFB4-7B
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Avnet Americas | Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R - Tape and Reel (Alt: DMN2300UFB4-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days Container: Reel | 80000 Factory Stock |
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$0.0418 | Buy Now |
DISTI #
522-DMN2300UFB4-7B
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Mouser Electronics | MOSFETs 20V N-Ch ENH Mode 175mOhm 4.5V 1.30A RoHS: Compliant | 36882 |
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$0.0570 / $0.2500 | Buy Now |
DISTI #
V72:2272_06698100
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Arrow Electronics | Trans MOSFET N-CH 20V 1.3A 3-Pin X2-DFN T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2405 Container: Cut Strips | Americas - 3487 |
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$0.0479 / $0.0528 | Buy Now |
DISTI #
70438072
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RS | MOSFET, N Channel, Trans,20V 1.3A DFN3 | Diodes Inc DMN2300UFB4-7B RoHS: Not Compliant Min Qty: 250 Package Multiple: 1 Container: Bulk | 0 |
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$0.3170 | RFQ |
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Future Electronics | N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel | 10000Reel |
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$0.0438 / $0.0475 | Buy Now |
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Future Electronics | N-Channel 20 V 175 mOhm 1.6 nC Enhancement Mosfet - DFN-1006-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0452 / $0.0490 | Buy Now |
DISTI #
DMN2300UFB4-7B
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TME | Transistor: N-MOSFET, unipolar, 20V, 0.96A, 0.5W, X1-DFN1006-3, ESD Min Qty: 1 | 0 |
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$0.0562 / $0.2849 | RFQ |
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DMN2300UFB4-7B
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN2300UFB4-7B
Diodes Incorporated
Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006H4-3, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Part Package Code | DFN | |
Package Description | GREEN, PLASTIC, DFN1006H4-3, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY, LOW THRESHOLD | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 1.3 A | |
Drain-source On Resistance-Max | 0.175 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.47 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for DMN2300UFB4-7B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN2300UFB4-7B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDS331ND87Z | Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | DMN2300UFB4-7B vs NDS331ND87Z |
NDS331N/S62Z | 1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | DMN2300UFB4-7B vs NDS331N/S62Z |
NDS331NL99Z | Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | DMN2300UFB4-7B vs NDS331NL99Z |
DMN2300UFB-7B | Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006-3, 3 PIN | Diodes Incorporated | DMN2300UFB4-7B vs DMN2300UFB-7B |
NDS331N | Small Signal Field-Effect Transistor, 1.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | DMN2300UFB4-7B vs NDS331N |
NDS331N | N-Channel Logic Level Enhancement Mode Field Effect Transistor 20V, 1.3A, 0.21Ω, SOT-23-3, 3000-REEL | onsemi | DMN2300UFB4-7B vs NDS331N |
NDS331N/D87Z | 1300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | DMN2300UFB4-7B vs NDS331N/D87Z |