Part Details for CY7C1515JV18-250BZXC by Cypress Semiconductor
Overview of CY7C1515JV18-250BZXC by Cypress Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Part Details for CY7C1515JV18-250BZXC
CY7C1515JV18-250BZXC CAD Models
CY7C1515JV18-250BZXC Part Data Attributes
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CY7C1515JV18-250BZXC
Cypress Semiconductor
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Datasheet
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CY7C1515JV18-250BZXC
Cypress Semiconductor
QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 17 mm | |
| Memory Density | 75497472 bit | |
| Memory IC Type | QDR SRAM | |
| Memory Width | 36 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX36 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 1.04 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 15 mm |
Alternate Parts for CY7C1515JV18-250BZXC
This table gives cross-reference parts and alternative options found for CY7C1515JV18-250BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1515JV18-250BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| GS8662D36E-250 | GSI Technology | Check for Price | DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | CY7C1515JV18-250BZXC vs GS8662D36E-250 |
| GS8672D36BGE-250T | GSI Technology | Check for Price | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | CY7C1515JV18-250BZXC vs GS8672D36BGE-250T |
| K7R643684M-FC25S | Samsung Semiconductor | Check for Price | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 | CY7C1515JV18-250BZXC vs K7R643684M-FC25S |
| CY7C1515AV18-250BZC | Cypress Semiconductor | Check for Price | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | CY7C1515JV18-250BZXC vs CY7C1515AV18-250BZC |
| GS8662D36BGD-250 | GSI Technology | Check for Price | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | CY7C1515JV18-250BZXC vs GS8662D36BGD-250 |
| CY7C1515V18-250BZC | Cypress Semiconductor | Check for Price | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | CY7C1515JV18-250BZXC vs CY7C1515V18-250BZC |
| K7R643684M-EC25T | Samsung Semiconductor | Check for Price | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165 | CY7C1515JV18-250BZXC vs K7R643684M-EC25T |
| GS8662D36BD-250T | GSI Technology | Check for Price | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, FPBGA-165 | CY7C1515JV18-250BZXC vs GS8662D36BD-250T |
| GS8672D36BE-250 | GSI Technology | Check for Price | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165 | CY7C1515JV18-250BZXC vs GS8672D36BE-250 |
| GS8662D36GE-250T | GSI Technology | Check for Price | DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | CY7C1515JV18-250BZXC vs GS8662D36GE-250T |