There are no models available for this part yet.
Overview of CY7C1420KV18-300BZXC by Cypress Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for CY7C1420KV18-300BZXC by Cypress Semiconductor
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
45T1863
|
Newark | Sync Srams/Tray |Cypress Infineon Technologies CY7C1420KV18-300BZXC RoHS: Not Compliant Min Qty: 272 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | ||
Rochester Electronics | CY7C1420KV18 - DDR SRAM, 1MX36, 0.45ns PBGA165 ' RoHS: Compliant Status: Active Min Qty: 1 | 50 |
|
$39.8900 / $46.9300 | Buy Now | ||
Flip Electronics | Stock, ship today | 2397 |
|
RFQ |
CAD Models for CY7C1420KV18-300BZXC by Cypress Semiconductor
Part Data Attributes for CY7C1420KV18-300BZXC by Cypress Semiconductor
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
CYPRESS SEMICONDUCTOR CORP
|
Part Package Code
|
BGA
|
Package Description
|
13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
|
Pin Count
|
165
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
3A991.B.2.A
|
HTS Code
|
8542.32.00.41
|
Access Time-Max
|
0.45 ns
|
Additional Feature
|
PIPELINED ARCHITECTURE
|
Clock Frequency-Max (fCLK)
|
300 MHz
|
I/O Type
|
COMMON
|
JESD-30 Code
|
R-PBGA-B165
|
JESD-609 Code
|
e1
|
Length
|
15 mm
|
Memory Density
|
37748736 bit
|
Memory IC Type
|
DDR SRAM
|
Memory Width
|
36
|
Moisture Sensitivity Level
|
3
|
Number of Functions
|
1
|
Number of Terminals
|
165
|
Number of Words
|
1048576 words
|
Number of Words Code
|
1000000
|
Operating Mode
|
SYNCHRONOUS
|
Operating Temperature-Max
|
70 °C
|
Operating Temperature-Min
|
|
Organization
|
1MX36
|
Output Characteristics
|
3-STATE
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
LBGA
|
Package Equivalence Code
|
BGA165,11X15,40
|
Package Shape
|
RECTANGULAR
|
Package Style
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial
|
PARALLEL
|
Peak Reflow Temperature (Cel)
|
260
|
Qualification Status
|
Not Qualified
|
Seated Height-Max
|
1.4 mm
|
Standby Current-Max
|
0.27 A
|
Standby Voltage-Min
|
1.7 V
|
Supply Current-Max
|
0.56 mA
|
Supply Voltage-Max (Vsup)
|
1.9 V
|
Supply Voltage-Min (Vsup)
|
1.7 V
|
Supply Voltage-Nom (Vsup)
|
1.8 V
|
Surface Mount
|
YES
|
Technology
|
CMOS
|
Temperature Grade
|
COMMERCIAL
|
Terminal Finish
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
Terminal Form
|
BALL
|
Terminal Pitch
|
1 mm
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Width
|
13 mm
|
Alternate Parts for CY7C1420KV18-300BZXC
This table gives cross-reference parts and alternative options found for CY7C1420KV18-300BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1420KV18-300BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GS8182D36BD-375MT | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1420KV18-300BZXC vs GS8182D36BD-375MT |
CY7C1243KV18-450BZC | QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | Cypress Semiconductor | CY7C1420KV18-300BZXC vs CY7C1243KV18-450BZC |
CY7C1393KV18-333BZI | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165 | Infineon Technologies AG | CY7C1420KV18-300BZXC vs CY7C1393KV18-333BZI |
GS8182D08BD-375M | QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1420KV18-300BZXC vs GS8182D08BD-375M |
GS8161E36DD-200V | Cache SRAM, 512KX36, 6.5ns, CMOS, PBGA165, FPBGA-165 | GSI Technology | CY7C1420KV18-300BZXC vs GS8161E36DD-200V |
IS64LF25618A-7.5TQA3 | 256KX18 CACHE SRAM, 7.5ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | CY7C1420KV18-300BZXC vs IS64LF25618A-7.5TQA3 |
K7M163645A-FI160 | ZBT SRAM, 512KX36, CMOS, PBGA165, FBGA-165 | Samsung Semiconductor | CY7C1420KV18-300BZXC vs K7M163645A-FI160 |
GS832118AGD-150VT | Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1420KV18-300BZXC vs GS832118AGD-150VT |
IS61NVP25618A-200TQ | 256KX18 ZBT SRAM, 3.1ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | CY7C1420KV18-300BZXC vs IS61NVP25618A-200TQ |
CY7C1418KV18-333BZC | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Infineon Technologies AG | CY7C1420KV18-300BZXC vs CY7C1418KV18-333BZC |
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