Part Details for CY7C1312BV18-250BZXI by Cypress Semiconductor
Overview of CY7C1312BV18-250BZXI by Cypress Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CY7C1312BV18-250BZXI
CY7C1312BV18-250BZXI CAD Models
CY7C1312BV18-250BZXI Part Data Attributes
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CY7C1312BV18-250BZXI
Cypress Semiconductor
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Datasheet
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CY7C1312BV18-250BZXI
Cypress Semiconductor
QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-126, FBGA-165
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-126, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | QDR SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 1MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.28 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.6 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 13 mm |
Alternate Parts for CY7C1312BV18-250BZXI
This table gives cross-reference parts and alternative options found for CY7C1312BV18-250BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1312BV18-250BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K7R161882B-FI25 | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1312BV18-250BZXI vs K7R161882B-FI25 |
| CY7C1312BV18-250BZXC | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-126, FBGA-165 | Cypress Semiconductor | CY7C1312BV18-250BZXI vs CY7C1312BV18-250BZXC |
| K7R161882B-EI25 | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1312BV18-250BZXI vs K7R161882B-EI25 |
| K7R161882B-EC25 | Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | CY7C1312BV18-250BZXI vs K7R161882B-EC25 |