Datasheets
CY7C1150KV18-400BZXI by:

DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, FBGA-165

Part Details for CY7C1150KV18-400BZXI by Infineon Technologies AG

Overview of CY7C1150KV18-400BZXI by Infineon Technologies AG

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for CY7C1150KV18-400BZXI

Part # Distributor Description Stock Price Buy
DISTI # CY7C1150KV18-400BZ
Avnet Americas SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray (Alt: CY7C1150KV18-400BZ) RoHS: Compliant Min Qty: 23 Package Multiple: 1 Lead time: 0 Weeks, 2 Days 1859 Partner Stock
  • 23 $33.6450
  • 30 $32.7478
  • 50 $31.4020
  • 120 $30.5048
  • 230 $29.6076
  • 1,200 $28.7104
  • 2,300 $27.8132
$27.8132 / $33.6450 Buy Now
DISTI # CY7C1150KV18-400BZ
Avnet Americas SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray - Trays (Alt: CY7C1150KV18-400BZ) RoHS: Compliant Min Qty: 10 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tray 235 Partner Stock
  • 1 $37.4900
  • 25 $35.0000
  • 25 $36.7400
  • 100 $33.5700
  • 1,000 $30.3500
$30.3500 / $37.4900 Buy Now

Part Details for CY7C1150KV18-400BZXI

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CY7C1150KV18-400BZXI Part Data Attributes

CY7C1150KV18-400BZXI Infineon Technologies AG
Buy Now Datasheet
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CY7C1150KV18-400BZXI Infineon Technologies AG DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, FBGA-165
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FBGA-165
Reach Compliance Code compliant
Factory Lead Time 2 Days
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 18874368 bit
Memory IC Type DDR SRAM
Memory Width 36
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 524288 words
Number of Words Code 512000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 512KX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.29 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.64 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 13 mm

Alternate Parts for CY7C1150KV18-400BZXI

This table gives cross-reference parts and alternative options found for CY7C1150KV18-400BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1150KV18-400BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
GS8182D36BD-375MT QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology CY7C1150KV18-400BZXI vs GS8182D36BD-375MT
GS8161E36DGD-333I Cache SRAM, 512KX36, 4.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1150KV18-400BZXI vs GS8161E36DGD-333I
IS61VF51236A-7.5TQVI 512KX36 CACHE SRAM, 7.5ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-100 Integrated Silicon Solution Inc CY7C1150KV18-400BZXI vs IS61VF51236A-7.5TQVI
IDT71V2548XS133PFI ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 Integrated Device Technology Inc CY7C1150KV18-400BZXI vs IDT71V2548XS133PFI
GS832118AD-333IVT Cache SRAM, 2MX18, 5ns, CMOS, PBGA165, FPBGA-165 GSI Technology CY7C1150KV18-400BZXI vs GS832118AD-333IVT
GS8161E36DGD-150V Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1150KV18-400BZXI vs GS8161E36DGD-150V
CY7C1163KV18-400BZI QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1150KV18-400BZXI vs CY7C1163KV18-400BZI
CY7C1150KV18-400BZXI DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, FBGA-165 Cypress Semiconductor CY7C1150KV18-400BZXI vs CY7C1150KV18-400BZXI
GS832136AD-333IV Cache SRAM, 1MX36, 5ns, CMOS, PBGA165, FPBGA-165 GSI Technology CY7C1150KV18-400BZXI vs GS832136AD-333IV
R1Q3A3636ABG-40R IC,SYNC SRAM,QDR,1MX36,CMOS,BGA,165PIN,PLASTIC Renesas Electronics Corporation CY7C1150KV18-400BZXI vs R1Q3A3636ABG-40R

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