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Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
CTA2P1N-FDICT-ND
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DigiKey | TRANS ARRAY PNP/N-CH 40V SOT363 Min Qty: 1 Lead time: 36 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.4100 | Buy Now |
DISTI #
CTA2P1N-7-F
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Avnet Americas | Complex Transistor Array 6-Pin SOT-363 T/R - Tape and Reel (Alt: CTA2P1N-7-F) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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Bristol Electronics | 2950 |
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RFQ | ||
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Quest Components | 2360 |
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$0.2880 / $0.7200 | Buy Now |
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CTA2P1N-7-F
Diodes Incorporated
Buy Now
Datasheet
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CTA2P1N-7-F
Diodes Incorporated
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, GREEN, PLASTIC PACKAGE-6
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | DIODES INC | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Pin Count | 6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diodes Incorporated | |
Collector Current-Max (IC) | 0.6 A | |
Collector-Emitter Voltage-Max | 40 V | |
Configuration | SINGLE WITH BUILT-IN FET | |
DC Current Gain-Min (hFE) | 20 | |
Fall Time-Max (tf) | 30 ns | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Power Dissipation-Max (Abs) | 0.15 W | |
Qualification Status | Not Qualified | |
Rise Time-Max (tr) | 20 ns | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 200 MHz | |
Turn-off Time-Max (toff) | 255 ns | |
Turn-on Time-Max (ton) | 35 ns | |
VCEsat-Max | 0.75 V |