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60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm 2-DDPAK/TO-263 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
CSD18535KTTT | Texas Instruments | 60V, N ch NexFET MOSFET™, single D2PAK, 2mOhm 3-DDPAK/TO-263 -55 to 175 | |
CSD18535KTT | Texas Instruments | 60V, N ch NexFET MOSFET™, single D2PAK, 2mOhm 3-DDPAK/TO-263 -55 to 175 |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
296-48121-1-ND
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DigiKey | MOSFET N-CH 60V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
402 In Stock |
|
$1.3462 / $2.8800 | Buy Now |
DISTI #
595-CSD18535KTT
|
Mouser Electronics | MOSFETs 60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm 2-DDPAK/TO-263 -55 to 175 RoHS: Compliant | 335 |
|
$1.3400 / $3.0100 | Buy Now |
DISTI #
CSD18535KTT
|
TME | Transistor: N-MOSFET, unipolar, 60V, 200A, Idm: 400A, 300W, D2PAK Min Qty: 1 | 0 |
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$2.2500 / $3.3700 | RFQ |
DISTI #
C1S746204383380
|
Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 480 |
|
$1.7700 / $2.8200 | Buy Now |
|
LCSC | 60V 200A 2m100A10V 300W 2.4V250uA 1 N-Channel TO-263-3 MOSFETs ROHS | 13 |
|
$1.1421 / $1.5680 | Buy Now |
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CSD18535KTT
Texas Instruments
Buy Now
Datasheet
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CSD18535KTT
Texas Instruments
60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm 2-DDPAK/TO-263 -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | D2PAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Date Of Intro | 2016-03-27 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 616 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 200 A | |
Drain-source On Resistance-Max | 0.0029 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 31 pF | |
JESD-30 Code | R-PSSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD18535KTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18535KTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTP5860N | 103A, 60V, 0.003ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 418B-04, D2PAK-3 | onsemi | CSD18535KTT vs NTP5860N |
NTP5860NG | Single N-Channel Power MOSFET 60V, 220A, 3.0mΩ G, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi | CSD18535KTT vs NTP5860NG |