Part Details for CM300DU-12H by Mitsubishi Electric
Overview of CM300DU-12H by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for CM300DU-12H
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48F4211
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Newark | Igbt, Module, 600V, 300A, Continuous Collector Current:300A, Collector Emitter Saturation Voltage:600V, Power Dissipation:890W, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:600V Rohs Compliant: No |Mitsubishi Electric CM300DU-12H Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM300DU-12H
CM300DU-12H CAD Models
CM300DU-12H Part Data Attributes
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CM300DU-12H
Mitsubishi Electric
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Datasheet
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CM300DU-12H
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | SUPER FAST RECOVERY | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 300 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 890 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 350 ns | |
Turn-on Time-Nom (ton) | 250 ns | |
VCEsat-Max | 3 V |
Alternate Parts for CM300DU-12H
This table gives cross-reference parts and alternative options found for CM300DU-12H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM300DU-12H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CM150DY-12H | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | CM300DU-12H vs CM150DY-12H |
MG150H2YS1 | TRANSISTOR 150 A, 500 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM300DU-12H vs MG150H2YS1 |
1MBI600NN-060 | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4 | Fuji Electric Co Ltd | CM300DU-12H vs 1MBI600NN-060 |
2MBI100L-060 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN | Fuji Electric Co Ltd | CM300DU-12H vs 2MBI100L-060 |
CM300DU-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, | Powerex Power Semiconductors | CM300DU-12H vs CM300DU-12H |
2MBI300L-060 | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel, M217, 7 PIN | Fuji Electric Co Ltd | CM300DU-12H vs 2MBI300L-060 |
BSM50GB60DLCHOSA1 | Insulated Gate Bipolar Transistor, MOUDLE-7 | Infineon Technologies AG | CM300DU-12H vs BSM50GB60DLCHOSA1 |
CM300HA-12H | Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel | Powerex Power Semiconductors | CM300DU-12H vs CM300HA-12H |
MG300H1US1 | TRANSISTOR 300 A, 500 V, N-CHANNEL IGBT, 2-109A4A, 4 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | CM300DU-12H vs MG300H1US1 |
1MBI400L-060 | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, M116, 4 PIN | Fuji Electric Co Ltd | CM300DU-12H vs 1MBI400L-060 |