Part Details for CM1800DY-34S by Mitsubishi Electric
Results Overview of CM1800DY-34S by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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CM1800DY-34S Information
CM1800DY-34S by Mitsubishi Electric is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for CM1800DY-34S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
90W4341
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Newark | Igbt Module, Dual, 1.7Kv, 1.8Ka, Continuous Collector Current:1.8Ka, Collector Emitter Saturation ... more RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM1800DY-34S
CM1800DY-34S CAD Models
CM1800DY-34S Part Data Attributes
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CM1800DY-34S
Mitsubishi Electric
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Datasheet
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CM1800DY-34S
Mitsubishi Electric
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Mitsubishi | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 1800 A | |
| Collector-Emitter Voltage-Max | 1700 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Fall Time-Max (tf) | 500 ns | |
| Gate-Emitter Thr Voltage-Max | 6.6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PUFM-X14 | |
| Number of Elements | 2 | |
| Number of Terminals | 14 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 11535 W | |
| Reference Standard | UL RECOGNIZED | |
| Rise Time-Max (tr) | 200 ns | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 1450 ns | |
| Turn-on Time-Max (ton) | 1300 ns | |
| VCEsat-Max | 2.7 V |