Part Details for CLY5E6327 by Qorvo
Overview of CLY5E6327 by Qorvo
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CLY5E6327
CLY5E6327 CAD Models
CLY5E6327 Part Data Attributes
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CLY5E6327
Qorvo
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Datasheet
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CLY5E6327
Qorvo
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, SOT-223, 4 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | QORVO INC | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 9 V | |
Drain Current-Max (ID) | 1.2 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | GOLD | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for CLY5E6327
This table gives cross-reference parts and alternative options found for CLY5E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CLY5E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CLY5E6327 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, SOT-223, 4 PIN | Infineon Technologies AG | CLY5E6327 vs CLY5E6327 |
CLY5E6327 | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | Siemens | CLY5E6327 vs CLY5E6327 |