Part Details for CFH120-08 by Qorvo
Overview of CFH120-08 by Qorvo
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CFH120-08
CFH120-08 CAD Models
CFH120-08 Part Data Attributes
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CFH120-08
Qorvo
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Datasheet
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CFH120-08
Qorvo
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | QORVO INC | |
| Package Description | PLASTIC, MW-4, 4 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3 V | |
| Drain Current-Max (ID) | 0.04 A | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | K BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 11.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for CFH120-08
This table gives cross-reference parts and alternative options found for CFH120-08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CFH120-08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE425S01-T1B | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Compound Semiconductor Devices Ltd | CFH120-08 vs NE425S01-T1B |
| FHX14LP | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-4 | FUJITSU Limited | CFH120-08 vs FHX14LP |
| NE76118-T1 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | Renesas Electronics Corporation | CFH120-08 vs NE76118-T1 |
| MGF4952A | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEADLESS, CERAMIC PACKAGE-4 | Mitsubishi Electric | CFH120-08 vs MGF4952A |
| CFY30 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, | Qorvo | CFH120-08 vs CFY30 |
| NE72218-T1-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | CFH120-08 vs NE72218-T1-58 |
| MGF4914E | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN | Mitsubishi Electric | CFH120-08 vs MGF4914E |
| CFH120-10 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN | Infineon Technologies AG | CFH120-08 vs CFH120-10 |
| NE72218-T2-59 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | CFH120-08 vs NE72218-T2-59 |
| NE76118-T1 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPER MINIMOLD PACKAGE-4 | NEC Compound Semiconductor Devices Ltd | CFH120-08 vs NE76118-T1 |