Datasheets
CDM4-600LRTR13 by: Central Semiconductor Corp

Power Field-Effect Transistor, 4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2

Part Details for CDM4-600LRTR13 by Central Semiconductor Corp

Overview of CDM4-600LRTR13 by Central Semiconductor Corp

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Applications Consumer Electronics Audio and Video Systems Computing and Data Storage Entertainment and Gaming

Part Details for CDM4-600LRTR13

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CDM4-600LRTR13 Part Data Attributes

CDM4-600LRTR13 Central Semiconductor Corp
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CDM4-600LRTR13 Central Semiconductor Corp Power Field-Effect Transistor, 4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2
Part Life Cycle Code Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP
Package Description DPAK-3/2
Reach Compliance Code unknown
ECCN Code EAR99
Date Of Intro 2016-06-24
Additional Feature ULTRA LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.95 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CDM4-600LRTR13

This table gives cross-reference parts and alternative options found for CDM4-600LRTR13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CDM4-600LRTR13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TSM60NB900CHC5G Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Taiwan Semiconductor CDM4-600LRTR13 vs TSM60NB900CHC5G
CDM4-600LR Power Field-Effect Transistor, 4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 Central Semiconductor Corp CDM4-600LRTR13 vs CDM4-600LR
AOD4S60 Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, DPAK-3 Alpha & Omega Semiconductor CDM4-600LRTR13 vs AOD4S60

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