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CDBQR0130L by:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.1A, 35V V(RRM), Silicon, DFN1006-2

Part Details for CDBQR0130L by Galaxy Microelectronics

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for CDBQR0130L

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CDBQR0130L Part Data Attributes

CDBQR0130L Galaxy Microelectronics
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CDBQR0130L Galaxy Microelectronics Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.1A, 35V V(RRM), Silicon, DFN1006-2
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description DFN1006-2
Reach Compliance Code unknown
Application GENERAL PURPOSE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.35 V
JESD-30 Code R-PBCC-N2
Non-rep Pk Forward Current-Max 1 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 125 °C
Output Current-Max 0.1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 35 V
Reverse Current-Max 10 µA
Reverse Test Voltage 10 V
Surface Mount YES
Technology SCHOTTKY
Terminal Form NO LEAD
Terminal Position BOTTOM

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