C2109-4S6066
Intel Corporation
Description: Page Mode DRAM, 8KX1, 250ns, MOS, CDIP16

Overview of C2109-4S6066 by Intel Corporation

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for C2109-4S6066 by Intel Corporation

C2109-4S6066
Intel Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTEL CORP
Package Description
DIP, DIP16,.3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Time-Max
250 ns
I/O Type
SEPARATE
JESD-30 Code
R-XDIP-T16
JESD-609 Code
e0
Memory Density
8192 bit
Memory IC Type
PAGE MODE DRAM
Memory Width
1
Number of Terminals
16
Number of Words
8192 words
Number of Words Code
8000
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8KX1
Output Characteristics
3-STATE
Package Body Material
CERAMIC
Package Code
DIP
Package Equivalence Code
DIP16,.3
Package Shape
RECTANGULAR
Package Style
IN-LINE
Qualification Status
Not Qualified
Refresh Cycles
64
Supply Current-Max
0.035 mA
Surface Mount
NO
Technology
MOS
Temperature Grade
COMMERCIAL
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Pitch
2.54 mm
Terminal Position
DUAL
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  1. C2109-4S6066
    Intel Corporation
    Page Mode DRAM, 8KX1, 250ns, MOS, CDIP16
    VS

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