Datasheets
BZT03C10 by:

Zener Diode, 10V V(Z), 6%, 1.3W, Silicon, Unidirectional, DO-15,

Part Details for BZT03C10 by Galaxy Semi-Conductor Co Ltd

Overview of BZT03C10 by Galaxy Semi-Conductor Co Ltd

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Part Details for BZT03C10

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BZT03C10 Part Data Attributes

BZT03C10 Galaxy Semi-Conductor Co Ltd
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BZT03C10 Galaxy Semi-Conductor Co Ltd Zener Diode, 10V V(Z), 6%, 1.3W, Silicon, Unidirectional, DO-15,
Part Life Cycle Code Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD
Package Description O-XALF-W2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type ZENER DIODE
Dynamic Impedance-Max 4 Ω
JEDEC-95 Code DO-15
JESD-30 Code O-XALF-W2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Power Dissipation-Max 1.3 W
Reference Voltage-Nom 10 V
Surface Mount NO
Technology ZENER
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 6%
Working Test Current 50 mA

Alternate Parts for BZT03C10

This table gives cross-reference parts and alternative options found for BZT03C10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BZT03C10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BZT03C9V1 Zener Diode, 9.1V V(Z), 6.08%, 1.3W, Silicon, Unidirectional, DO-15, Galaxy Semi-Conductor Co Ltd BZT03C10 vs BZT03C9V1
BZT03C9V1 Zener Diode; Configuration: Single; VZ Typ (V): 9.1; P Max (mW): 1300; Package: DO-41 Galaxy Microelectronics BZT03C10 vs BZT03C9V1

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