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Overview of BZS55C6V2RXG by Taiwan Semiconductor
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- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
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- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
CAD Models for BZS55C6V2RXG by Taiwan Semiconductor
Part Data Attributes for BZS55C6V2RXG by Taiwan Semiconductor
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
End Of Life
|
Ihs Manufacturer
|
TAIWAN SEMICONDUCTOR CO LTD
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.10.00.50
|
Configuration
|
SINGLE
|
Diode Element Material
|
SILICON
|
Diode Type
|
ZENER DIODE
|
Dynamic Impedance-Max
|
10 Ω
|
JESD-30 Code
|
R-PDSO-R2
|
JESD-609 Code
|
e3
|
Knee Impedance-Max
|
200 Ω
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity
|
UNIDIRECTIONAL
|
Power Dissipation-Max
|
0.5 W
|
Reference Voltage-Nom
|
6.2 V
|
Reverse Current-Max
|
0.1 µA
|
Reverse Test Voltage
|
2 V
|
Surface Mount
|
YES
|
Technology
|
ZENER
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
WRAP AROUND
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Voltage Tol-Max
|
5%
|
Working Test Current
|
5 mA
|