Part Details for BZD27-C8V2,135 by NXP Semiconductors
Overview of BZD27-C8V2,135 by NXP Semiconductors
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Part Details for BZD27-C8V2,135
BZD27-C8V2,135 CAD Models
BZD27-C8V2,135 Part Data Attributes
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BZD27-C8V2,135
NXP Semiconductors
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Datasheet
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BZD27-C8V2,135
NXP Semiconductors
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | O-LELF-R2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Breakdown Voltage-Min | 7.7 V | |
Case Connection | ISOLATED | |
Clamping Voltage-Max | 12.3 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JESD-30 Code | O-LELF-R2 | |
Non-rep Peak Rev Power Dis-Max | 300 W | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity | UNIDIRECTIONAL | |
Power Dissipation-Max | 0.8 W | |
Qualification Status | Not Qualified | |
Reverse Current-Max | 1200 µA | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Form | WRAP AROUND | |
Terminal Position | END | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |