There are no models available for this part yet.
Overview of BYM36E/41112 by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Energy and Power Systems
CAD Models for BYM36E/41112 by NXP Semiconductors
Part Data Attributes for BYM36E/41112 by NXP Semiconductors
|
|
|
|---|---|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
NXP SEMICONDUCTORS
|
|
Package Description
|
O-LALF-W2
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.10.00.80
|
|
Application
|
FAST SOFT RECOVERY
|
|
Case Connection
|
ISOLATED
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|
Configuration
|
SINGLE
|
|
Diode Element Material
|
SILICON
|
|
Diode Type
|
RECTIFIER DIODE
|
|
Forward Voltage-Max (VF)
|
1.78 V
|
|
JESD-30 Code
|
O-LALF-W2
|
|
Non-rep Pk Forward Current-Max
|
65 A
|
|
Number of Elements
|
1
|
|
Number of Phases
|
1
|
|
Number of Terminals
|
2
|
|
Operating Temperature-Max
|
175 °C
|
|
Operating Temperature-Min
|
-65 °C
|
|
Output Current-Max
|
2.9 A
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|
Package Body Material
|
GLASS
|
|
Package Shape
|
ROUND
|
|
Package Style
|
LONG FORM
|
|
Qualification Status
|
Not Qualified
|
|
Rep Pk Reverse Voltage-Max
|
1000 V
|
|
Reverse Current-Max
|
5 µA
|
|
Reverse Recovery Time-Max
|
0.15 µs
|
|
Surface Mount
|
NO
|
|
Technology
|
AVALANCHE
|
|
Terminal Form
|
WIRE
|
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Terminal Position
|
AXIAL
|
Alternate Parts for BYM36E/41112
This table gives cross-reference parts and alternative options found for BYM36E/41112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BYM36E/41112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BYM36E/31133 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs BYM36E/31133 |
| BYM36E/30113 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs BYM36E/30113 |
| BYM36E/22112 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs BYM36E/22112 |
| BYM36E/31113 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs BYM36E/31113 |
| 933818570113 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs 933818570113 |
| BYM36E/40113 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs BYM36E/40113 |
| BYM36EAMP | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2.9A, 1000V V(RRM), Silicon, PLASTIC PACKAGE-2 | Fagor Electrónica | BYM36E/41112 vs BYM36EAMP |
| BYM36E/30133 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs BYM36E/30133 |
| BYM36EGP | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2 | Gulfsemi | BYM36E/41112 vs BYM36EGP |
| BYM36E/21112 | DIODE 2.9 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | NXP Semiconductors | BYM36E/41112 vs BYM36E/21112 |