There are no models available for this part yet.
Overview of BYG10M-E3/TR by Vishay Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 9 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 8 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for BYG10M-E3/TR by Vishay Semiconductors
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
BYG10M-E3/GICT-ND
|
DigiKey | DIODE AVALANCHE 1KV 1.5A DO214AC Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
66416 In Stock |
|
$0.0809 / $0.2700 | Buy Now | |
New Advantage Corporation | BYG10M Series 1000 V 1.5 A Standard Avalanche SMD Rectifier - DO-214AC RoHS: Compliant Min Qty: 1 Package Multiple: 1800 | 903600 |
|
$0.0872 / $0.0934 | Buy Now |
CAD Models for BYG10M-E3/TR by Vishay Semiconductors
Part Data Attributes for BYG10M-E3/TR by Vishay Semiconductors
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY SEMICONDUCTORS
|
Part Package Code
|
DO-214AC
|
Package Description
|
R-PDSO-C2
|
Pin Count
|
2
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.10.00.80
|
Samacsys Manufacturer
|
Vishay
|
Additional Feature
|
FREE WHEELING DIODE
|
Application
|
GENERAL PURPOSE
|
Configuration
|
SINGLE
|
Diode Element Material
|
SILICON
|
Diode Type
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF)
|
1.1 V
|
JEDEC-95 Code
|
DO-214AC
|
JESD-30 Code
|
R-PDSO-C2
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Non-rep Pk Forward Current-Max
|
30 A
|
Number of Elements
|
1
|
Number of Phases
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-55 °C
|
Output Current-Max
|
1.5 A
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Qualification Status
|
Not Qualified
|
Rep Pk Reverse Voltage-Max
|
1000 V
|
Reverse Recovery Time-Max
|
4 µs
|
Surface Mount
|
YES
|
Technology
|
AVALANCHE
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
C BEND
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
40
|
Alternate Parts for BYG10M-E3/TR
This table gives cross-reference parts and alternative options found for BYG10M-E3/TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BYG10M-E3/TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BYG10MHM3_A/I | Rectifier Diode, | Vishay Intertechnologies | BYG10M-E3/TR vs BYG10MHM3_A/I |
BYG10M-M3/TR3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN | Vishay Intertechnologies | BYG10M-E3/TR vs BYG10M-M3/TR3 |
BYG10M-M3/TR | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN | Vishay Intertechnologies | BYG10M-E3/TR vs BYG10M-M3/TR |
BYG10MHM3_A/H | Rectifier Diode, | Vishay Intertechnologies | BYG10M-E3/TR vs BYG10MHM3_A/H |
BYG10M-M3/TR | DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode | Vishay Semiconductors | BYG10M-E3/TR vs BYG10M-M3/TR |
BYG10M-E3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, PLASTIC, SMA, 2 PIN | Vishay Intertechnologies | BYG10M-E3/TR vs BYG10M-E3 |
BYG10MHE3_A/H | Rectifier Diode, | Vishay Intertechnologies | BYG10M-E3/TR vs BYG10MHE3_A/H |
BYG10M-E3 | DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Rectifier Diode | Vishay Semiconductors | BYG10M-E3/TR vs BYG10M-E3 |
BYG10M-E3/TR3 | Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-214AC, SMA, 2 PIN | Vishay Intertechnologies | BYG10M-E3/TR vs BYG10M-E3/TR3 |